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TT.VIII.D

sveglia 14:00 - 15:30

Nanostructures for third-generation photovoltaic
SYNOPSIS
TT.VIII.D.1 Stefano OSSICINI
University of Modena and Reggio Emilia
Semicondutor Nanostructures for Novel Photovoltaic Devices
TT.VIII.D.2 Lorenzo PAVESI
University of Trento
Application of a Silicon Nanocrystal Down-Shifter to Solar Cell
TT.VIII.D.3 Ivan MARRI
University of Modena and Reggio Emilia
Carrier Multiplication in Semiconductor Nanocrystals for fostering Photovoltaics
TT.VIII.D.4 Antonio TERRASI
CNR-IMM & University of Catania
Colloidal Si and Ge Nanocrystals for Light Harvester
Chair: Stefano OSSICINI, University of Modena and Reggio Emilia
In collaboration with: University of Modena and Reggio Emilia

SYNOPSIS


Photovoltaics, the direct conversion of sunlight to electricity, is the fastest growing technology for electricity generation. "First generation" products use the same silicon wafers as in microelectronics. "Second generation" thin-films improves the economics by eliminating material costs. Third-generation photovoltaic cells are cells that are potentially able to overcome the Shockley-Queisser limit of  power efficiency. Among these cells a particular attention is now given to  quantum dot solar cells  that use nanocrystals  as the absorbing material. Nanocrystals have bandgaps that are tunable across a wide range of energy levels by changing their size. This property makes nanocrystals attractive since they can be used to improve efficiency by harvesting multiple portions of the solar spectrum. The session is aimed at presenting latest results in this field, including down-shifting, up-conversion and  carrier multiplication effects.


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