TT.VIII.E
14:00 - 15:30
Nanoelectronic devices: fabrication and characterization | ||
SYNOPSIS |
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TT.VIII.E.1 | Tommaso VALI CV Micron, Avezzano (AQ) 3D NAND: Memory Technology Trends abst |
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TT.VIII.E.2 | Kun-Ping HUANG ITRI-Industrial Technology Research Institute, Mechanical and Mechatronics Systems Research Laboratories, Taiwan Microwave Annealing for Dopant Activation in Semiconductor 7nm Process |
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TT.VIII.E.3 | Andrea Zappettini CV CNR-IMEM, Parma Fully-integrated nanosensors for the Internet of Things abst |
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TT.VIII.E.4 | Giovanni DE AMICIS LFoundry, Avezzano (AQ) Dark current impact of intentionally Cobalt contaminated Back Side Illuminated CMOS Image Sensors |
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Chair: Onofrio Antonino CACIOPPO, LFoundry, Avezzano (AQ) In collaboration with: Micron, CEA-Leti & CNIS, Sapienza University of Rome |
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SYNOPSIS in definition |