TT.V.A
14:00 - 15:30
| Towards graphene integration in electronic devices: potentials and challenges | ||
| SYNOPSIS |
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| TT.V.A.1 | Filippo GIANNAZZO CNR-IMM, Catania Towards high frequency devices based on graphene integration with Nitride semiconductors |
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| TT.V.A.2 | Rita RIZZOLI CNR-IMM, Bologna Effects of ageing tests on graphene structures |
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| TT.V.A.3 | Leonardo VITI CNR-Nanoscience Institute, Pisa Terahertz saturable absorbers from liquid phase exfoliation of graphite
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| TT.V.A.4 | Sergio FERRERO Polytechnic of Turin Laser as a powerful tool in graphene based devices |
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| Chair: Stefano BIANCO, Polytechnic of Turin In collaboration with: LPE, Vishay, Polytechnic of Turin |
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SYNOPSIS Graphene, the most popular 2D material, has an extraordinary potential in a wide range of application, spamming from electronic devices to energy related application and transparent conductive films. The technology for controlled graphene growth with low defectiveness is consolidated, opening new ways towards fabrication of devices with high performances. This symposium will summarize recent trends in the application of graphene in electronic devices, with particular focus on the crucial issues for graphene integration towards large scale device fabrication. Topics related with power electronics, material fabrication and testing, device reliability and application in different fields will be illustrated, to give an overview towards future applications. |
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