Gallium Nitride for power and high-frequency electronics
The electrical properties of Gallium Nitride (GaN) offer several advantages over Silicon (Si) for creating switching devices and circuits for power electronics. Already this emerging technology is showing improvements in power density and efficiency in several applications, including automotive, aerospace and avionics. GaN devices outperform the incumbent Si LDMOS technology, offering superior efficiency, instantaneous bandwidth and linearity, particularly in the higher frequency bands utilized in 5G radio access networks. In this session the recent research advancements as well as the strategies of the major industrial Italian players (STMicroelectronics and Leonardo) in this field will be presented.