Umberto CELANO - IMEC, Belgium

Three dimensional (3D) nanoelectronic devices and novel materials has been already widely introduced to maintain scaling and performance improvement in nowadays microelectronics. Logic switches (transistors) have been the first to move from 2D to 3D in 2011 with the introduction of FinFET in replacement of planar devices. Nonvolatile memory has followed in 2014 with the replacement of traditional flash devices with 3D NAND. Finally, the requirements for future technology nodes foresee the introduction of new materials (such as III-V compound semiconductors) fully integrated in 3D structures (trenches) embedded in traditional Si substrates. However, the pervasive introduction of 3D devices poses unparalleled challenges to semiconductor metrology.

This presentation is dived in two main parts. First, the present applications of atomic force microscopy (AFM) for the characterization of different nanoelectronic devices are reviewed. Second, Scalpel SPM is introduced as a concept for three-dimensional characterization with nm spatial resolution based on electrical scanning probe microscopy. Finally, a broad set of examples using Scalpel SPM will be provided for the characterization of nanoelectronic devices such as FinFET, RRAM and 3D NAND.

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