Design and Co-integration of ReRAM elements and crossbar arrays with CMOS peripheral circuitry

Yusuf LEBLEBICI, EPFL

Resistive RAM (ReRAM) elements based on transition-metal oxide layers are rapidly becoming viable options for nonvolatile information storage and for neuromorphic operations, allowing easy integration with conventional CMOS technologies. In this talk, we will review the ongoing research at EPFL on the realization of various ReRAM elements based on TiOx, TaOx, WOx and HfOx layers tailored for low voltage operation, as well as the design and co-integration of the CMOS peripheral circuitry for the read/write operations. In particular, the chip embedding platform enabling post-processing of diced samples for fabrication of memristive elements will be discussed, and examples will be provided. The talk will also cover the switching characterization and reliability/endurance metrics for nonvolatile memory elements.

 
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