III-V Semiconductor Nanowires Grown by Chemical Beam Epitaxy: Catalyzed Vs Non-Catalyzed Methods

Sergio Orazio BATTIATO, NEST-CNR and Scuola Normale Superiore, Pisa

III-V semiconductor nanowires (NWs) have been intensively investigated in view of their potential applications in future electronic and optoelectronic devices.
In this talk, I’ll present the main results of the Chemical Beam Epitaxy (CBE) growth of InAs NWs using several bottom-up approaches: Au-assisted, self-catalyzed and catalyst-free methods. I will explain some non-trivial aspects of the growth and the possible strategies to obtain the desired nanostructures employing the different approaches. 

 
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