Ludovic GOUX
IMEC, Belgium

Ludovic Goux received the M. Eng. degree in Material Science & Microelectronics from the ‘Institut National des Sciences Appliquées’ (INSA), and the M. Sc. degree in Optics & Solid-State Physics with honors from the university of Rennes, France, in 1999. He obtained the Ph.D. degree in Engineering Science from the University of Tours, France, in 2002. He joined STMicroelectronics, Tours, in 1999 as a Process Researcher, focusing on the epitaxial growth of conductive oxides and high-k dielectrics on Silicon for application in high capacitances. Since 2002, he has been with the ‘Interuniversity Microelectronics Center’ (imec), Leuven, Belgium, as a Memory Device Researcher, developing emerging memory technologies, namely ferroelectric (FRAM/FeFET), phase-change (PCRAM), organic (CuTCNQ), resistive-switching (RRAM) and conductive-bridging (CBRAM) memories. He is currently the Leader of the Memory Device Design group of imec composed of >20 researchers & students, developing advanced Flash, STT-MRAM and RRAM memory devices, as well as the Manager of the Emerging Memory program of imec, developing RRAM and MIMCAP stacks for DRAM.

He was a scientific-committee member of the Non-Volatile-Memory (NVM) symposium of E-MRS congress in 2012, and has been serving in several organization committees of NVM symposia, namely in the ECS fall meetings from 2014 to 2016, in the E-MRS congress in 2015, as well as in the Memory-Technology committee of IEDM in 2015&2016.

He has (co-)authored ~160 peer-reviewed publications, including more than 40 papers as 1st author, in the fields of high-k capacitors, ferroelectric materials and memories (FRAM), phase-change memories (PCRAM), RRAM and organic-type (Cu-TCNQ) memory devices, and he has published 1 book and 1 book chapter. He has also filed 22 patents in these fields. He has given 10 invited talks in international conferences and contributed to >160 conference papers.

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