16:00 - 17:30
| Physical Characterizations on semiconductor devices |
In collaboration with:
LFoundry, Renishaw
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SYNOPSIS
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| TT.III.C.1 |
Marco RENZELLI CV
LFoundry
UV emission from Silicon; evidences for possible physical explanations
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| TT.III.C.2 |
Giuseppe MOCCIA
LFoundry
Study of Raman Spectroscopy capability on SRP beveled samples for implant and anneal characterization
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| TT.III.C.3 |
Riccardo TAGLIAPIETRA
Renishaw
Accurate Raman imaging of rough samples and/or those with complex surface topographies
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| TT.III.C.4 |
Narciso GAMBACORTI
PAC-G/CEA Leti, Grenoble, France
Atomic Probe Tomography of of elements diffused by poly gate in to gate-oxide- to be confirmed
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Chair: Onofrio Antonino CACIOPPO, LFoundry
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Back to 12 September - Afternoon
