14:00 - 15:30
| Gallium Nitride for power and high-frequency electronics |
In collaboration with:
CNR-DSFTM |
SYNOPSIS
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| TT.V.G.1 |
Ferdinando IUCOLANO CV
STMicroelectronics
RF GaN on Si in ST
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| TT.V.G.2 |
Claudio LANZIERI CV
Leonardo spa, Roma
Technological solutions for GaN based Radars
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TT.V.G.3
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Raffaella CALARCO CV
Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Growth, structural, optical and electrical properties of (In,Ga)N/GaN short period superlattices and their possible usage in laser diodes and high-power devices
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TT.V.G.4
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Caroline CHÈZE CV
Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Advantages of synthesis of III-nitride heterostructures on N-polar substrates for lighting and high-power applications
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| Chair: Guglielmo FORTUNATO CV, CNR IMM, Roma |
Back to 13 September - Afternoon
