TS.II.C
11:30 - 13:00
Nano-characterization | ||
go to synopsis | ||
TS.II.C.1 | Arianna LUCIA, CNIS Sapienza Università di Roma and Giuseppe MOCCIA, LFoundry TERS applications to silicon strain characterization |
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TS.II.C.2 | Giuseppe MOCCIA and Vanda GRANATO, LFoundry Polysilicon characterization by Raman/XRD/TEM techniques |
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TS.II.C.3 | Vanda GRANATO, LFoundry Si e Si/Ge strain analysis by precesssion electron diffraction (PED) |
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TS.II.C.4 | Antonio D’ORECCHIA, CNIS Sapienza Università di Roma - Mattia SILVESTRE, LFoundry Electrical Characterizations through a Nanoprobing System Installed in a FESEM |
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TS.II.C.5 | Arianna LUCIA, CNIS Sapienza Università di Roma - G. MARGUTTI, LFoundry Micro and nano Raman characterization of SiGe structures obtained by Ge implant in Si |